Space charge effects in ferroelectric thin films

Charge Transport in Ferroelectric Thin Films

Stress effects in sol-gel derived ferroelectric thin films

Residual stress development during processing of sol-gel derived ferroelectric thin films influences electromechanical properties and performance. The present work investigates the effects of stress on field-induced polarization switching in ferroelectric Pb~Zr0.52Ti0.48)O3 ~PZT! ~52/48! thin films. Film response is measured as a function of externally applied mechanical stress using a double-b...

Simulation of Ferroelectric Thin Films

The hysteresis properties of ferroelectric thin films open an elegant and promising way to build nonvolatile memory cells. Our basic goal is to set up a tool which is able to reproduce the macroscopic behavior of the devices by calculating current, voltage and charge at the contacts correctly. Our tool, MINIMOS-NT, provides a rigorous approach to describe the static hysteresis properties of fer...

Scaling Of Ferroelectric Properties In Thin Films

A fundamental issue in ferroic systems (ferromagnetic and ferroelectric) is the scaling of the order parameter (magnetization or polarization) with size. Specifically, in ferroelectric thin films, deviations in the polarization can occur due to: (i) competition between thermal vibrations and the correlation energy (which aligns the dipoles); (ii) damage during fabrication. These deviations will...

Ferroelastic domains in bilayered ferroelectric thin films

We investigate theoretically ferroelastic domain fractions in a heteroepitaxial bilayer consisting of 001 tetragonal PbZrxTi1−xO3 and 001 rhombohedral PbZr1−xTixO3 on a thick 001 passive substrate as a function of the lattice misfit strain between layers and the substrate. By considering the self-strain in each layer and the indirect elastic interaction between the layers, we provide a numerica...